Datasheet > 2SB0779|2SB779

2SB0779|2SB779

更新时间： 2024-02-25 19:03:12

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
3页	77K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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2SB0779|2SB779 数据手册

Transistors

2SB0779 (2SB779)

Silicon PNP epitaxial planar type

Unit: mm

For low-frequency output amplification

+0.10

–0.05

0.40

+0.10

–0.06

0.16

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• Satisfactory linearity of forward current transfer ratio h_FEat the

low collector voltage

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

(0.95) (0.95)

1.9 ^0.1

+0.20

2.90

–0.05

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−25

Unit

1: Base

2: Emitter

3: Collector

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−20

EIAJ: SC-59

Mini3-G1 Package

−7

Marking Symbol: 1A

Collector current

I_C

I_CP

P_C

T_j

−500

−1

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

200

°C

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−25

−20

−7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

I_C= −10 µA, I_E= 0

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −25 V, I_E= 0

V_CE= −20 V, I_B= 0

V_CE= −2 V, I_C= −500 mA

V_CE= −2 V, I_C= −1 A

−100

−1

µA



I_CEO

Forward current transfer ratio ^*

h_FE1

h_FE2

220



Collector-emitter saturation voltage ^*

V_CE(sat)I_C= −500 mA, I_B= −50 mA

V_BE(sat)I_C= −500 mA, I_B= −50 mA

− 0.2 − 0.4

Base-emitter saturation voltage ^*

−1.2

Transition frequency

f_T

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

150

MHz

Collector output capacitance

C_ob

(Common-emitter reverse transfer)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE1

90 to 155

130 to 220

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2003

SJC00054BED

12 3

中文翻译

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与2SB0779|2SB779相关器件

型号	品牌	获取价格	描述	数据表
2SB0779Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SB0779R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SB0788	PANASONIC	获取价格	For High Breakdown Voltage Low-noise Amplification
2SB0788(2SB788)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅
2SB0788\|2SB788	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0788Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, M-A1,
2SB0788R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 20MA I(C) \| SC-71
2SB0788S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 20MA I(C) \| SC-71
2SB0788T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 20MA I(C) \| SC-71
2SB0789	PANASONIC	获取价格	Silicon PNP epitaxial planar type

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