Transistor
2SB0789, 2SB0789A (2SB789, 2SB789A)
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Unit: mm
Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A)
1.5 0.1
4.5 0.1
1.6 0.2
Features
High collector to emitter voltage VCEO
Large collector power dissipation PC.
I
G
.
G
45°
Absolute Maximum Ratings (Ta=25˚C)
I
0.4 0.08
0.4 0.04
Parameter
Symbol
Ratings
–100
–120
–100
–120
–5
Unit
0.5 0.08
1.5 0.1
Collector to
2SB0789
2SB0789A
2SB0789
3.0 0.15
2
VCBO
V
base voltage
Collector to
3
1
VCEO
V
emitter voltage 2SB0789A
Emitter to base voltage
Peak collector current
Collector current
marking
VEBO
ICP
V
A
–1
1:Base
2:Collector
3:Emitter
IC
–0.5
A
EIAJ:SC–62
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Mini Power Type Package
Tj
150
(2SB0789)
Marking symbol : D
Tstg
–55 ~ +150
(2SB0789A)
E
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
*
Electrical Characteristics (Ta=25˚C)
I
Parameter
Collector to emitter 2SB0789
voltage 2SB0789A
Symbol
Conditions
IC = –100µA, IB = 0
min
–100
–120
–5
typ
max
Unit
V
VCEO
Collector to base voltage
VEBO
IE = –10µA, IC = 0
CE = –10V, IC = –150mA
V
*
hFE1
V
90
220
Forward current transfer ratio
hFE2
VCE = –5V, IC = –500mA
50
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
– 0.2
– 0.6
–1.2
V
V
– 0.85
120
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
30
*hFE1 Rank classification
Rank
hFE1
Q
R
90 ~ 155
DQ
130 ~ 220
DR
2SB0789
Marking
Symbol
2SB0789A
EQ
ER
Note.) The Part numbers in the Parenthesis show conventional
part number.
1