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2SA1294 PDF预览

2SA1294

更新时间: 2024-10-28 06:18:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
2页 107K
描述
isc Silicon PNP Power Transistor

2SA1294 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

2SA1294 数据手册

 浏览型号2SA1294的Datasheet PDF文件第1页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SA1294  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP. MAX UNIT  
V(BR)CEO  
IC= -25mA ; IB= 0  
-230  
V
IC= -5.0A; IB= -0.5A  
VCB= -230V ; IE= 0  
VEB= -5V; IC= 0  
-2.0  
-100  
-100  
140  
V
VCE  
(sat)  
ICBO  
μA  
μA  
IEBO  
hFE  
COB  
fT  
Emitter Cutoff Current  
DC Current Gain  
IC= -5A ; VCE= -4V  
IE= 0 ; VCB= -10V;f= 1.0MHz  
IE= 2A ; VCE= -12V  
50  
Output Capacitance  
500  
35  
pF  
Current-Gain—Bandwidth Product  
MHz  
Switching Times  
Turn-on Time  
0.35  
1.5  
μs  
μs  
μs  
ton  
tstg  
tf  
IC= -5A ,RL= 12Ω,  
IB1= -IB2= -0.5A,VCC= -60V  
Storage Time  
Fall Time  
0.3  
‹ hFE Classifications  
O
Y
50-100  
70-140  
2
isc Websitewww.iscsemi.cn  

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