LAP T 2 S A1 2 9 4
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)
Application : Audio and General Purpose
(Ta=25°C)
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
External Dimensions MT-100(TO3P)
Unit
V
Symbol
Symbol
VCBO
VCEO
VEBO
IC
2SA1294
2SA1294
Conditions
Unit
µA
µA
V
±0.2
4.8
±0.4
15.6
±0.1
ICBO
2.0
–230
VCB=–230V
–100max
–100max
–230min
50min
9.6
V
IEBO
–230
VEB=–5V
IC=–25mA
V(BR)CEO
hFE
V
–5
a
b
±0.1
ø3.2
A
VCE=–4V, IC=–5A
C=–5A, IB=–0.5A
–15
IB
VCE(sat)
fT
–2.0max
35typ
A
I
V
MHz
pF
–4
130(Tc=25°C)
150
PC
VCE=–12V, IE=2A
W
°C
°C
2
Tj
COB
500typ
VCB=–10V, f=1MHz
3
+0.2
-0.1
+0.2
-0.1
Tstg
to
–55 +150
1.05
0.65
1.4
to
to
hFE Rank O(50 100), Y(70 140)
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 6.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
–60
12
–5
–10
5
–500
500
0.35typ
1.50typ 0.30typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
–15
–15
–10
–5
– 3
–10
–5
0
–2
–1
–50mA
IC=–10A
IB=–20mA
–5A
0
0
0
–1
–2
–3
–4
0
–0.5
–1.0
–1.5
–2.0
0
–1
–2
–2.5
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
200
200
3
125˚C
Typ
100
50
25˚C
100
50
1
–30˚C
0.5
10
–0.02
10
–0.02
0.1
–0.1
–0.5 –1
–5 –10 –15
1
10
100
Time t(ms)
1000 2000
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10 –15
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
130
100
–40
60
40
–10
–5
–1
50
–0.5
20
Without Heatsink
Natural Cooling
–0.1
Without Heatsink
3.5
0
0
0.02
–0.05
–3
–10
–100
–300
0.1
1
10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
15