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2SA1297_07

更新时间： 2024-11-20 04:25:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关放大器电源开关功率放大器
页数 文件大小 规格书
3页 380K
描述
Power Amplifier Applications Power Switching Applications

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2SA1297_07 数据手册

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2SA1297  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1297  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
•
•
Low saturation voltage: V  
= −0.5 V (max) @I = −2 A  
CE (sat) C  
Complementary to 2SC3267.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−20  
−20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
6
V
I
−2  
A
C
Base current  
I
−0.5  
400  
A
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
mW  
°C  
°C  
C
T
150  
j
T
stg  
−55~150  
JEDEC  
JEITA  
―
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-4E1A  
Weight: 0.13 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −20 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −6 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= −10 mA, I = 0  
−20  
−6  
(BR) CEO  
(BR) EBO  
C
E
B
= −0.1 mA, I = 0  
⎯
V
C
h
FE (1)  
(Note)  
V
V
= −2 V, I = −0.1 A  
120  
⎯
400  
CE  
C
DC current gain  
h
= −2 V, I = −2 A  
40  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−0.5  
−0.85  
⎯
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −2 A, I = −0.1 A  
V
V
CE (sat)  
C
B
V
V
V
V
= −2 V, I = −0.1 A  
⎯
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= −2 V, I = −0.5 A  
120  
40  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
ob  
E
Note: h  
Y: 120~240, GR: 200~400  
FE (1)  
1
2007-11-01  
123

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