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2SA1298OTE85R PDF预览

2SA1298OTE85R

更新时间: 2024-11-20 15:30:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
2页 59K
描述
TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SA1298OTE85R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.69
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
VCEsat-Max:0.4 VBase Number Matches:1

2SA1298OTE85R 数据手册

 浏览型号2SA1298OTE85R的Datasheet PDF文件第2页 

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