2SA1300

更新时间： 2024-11-24 04:25:47

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	66K
描述
Plastic-Encapsulated Transistors

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中文翻译

获取价格

数据手册

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2SA1300 数据手册

Transys

Electronics

I M I T E D

TO-92 Plastic-Encapsulated Transistors

2SA1300

TRANSISTOR (PNP)

TO-92

FEATURES

Power dissipation

P_CM

Collector current

I_CM

0.75 W (Tamb=25℃)

1. EMITTER

2. COLLECTOR

-2

Collector-base voltage

V_(BR)CBO: -20

3. BASE

Operating and storage junction temperature range

1 2 3

T_J: 150℃

T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-1mA , I_E=0

MIN

MAX

UNIT

-20

-10

-6

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-10mA , I_B=0

I_E=-1mA, I_C=0

V_CB=-20 V , I_E=0

V_EB=-6 V , I_C=0

-0.1

µA

I_EBO

Emitter cut-off current

h_FE

DC current gain

V_CE=-1V, I_C=-0.5A

I_C=-2A, I_B= -100mA

I_C= -2A, V_CE=-1V

140

100

600

-0.5

-1.5

V_CE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter voltage

V_CE=-1V, I_C= -0.5A

MHz

Transition frequency

f _T

f = 30MHz

CLASSIFICATION OF h_FE

Rank

200-400

300-600

140-280

Range

中文翻译

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