Datasheet > 2SA1300BL(SOT-89)

2SA1300BL(SOT-89)

更新时间： 2024-11-24 15:28:47

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友顺 - UTC		/
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描述
Transistor

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技术参数
数据手册

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2SA1300BL(SOT-89) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	300
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.75 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SA1300BL(SOT-89) 数据手册

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UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXAL TYPE

DESCRIPTION

*Strobo Flash Applications.

*Medium Power Amplifier Applications.

FEATURES

*High DC Current Gain and Excellent hFE Linearity.

*hFE(1)=140-600, (V_CE= -1V,I_C= -0.5A)

*hFE(2)=60(Min.),120(Typ.),(V_CE= -1V,I_C= -4A)

*Low Saturation Voltage

*V_{CE (sat)}= -0.5V(Max.), (I_C= -2A,I_E= -50mA)

SOT-89

1: Emitter 2: Collector 3:Base

ABSOLUTE MAXIMUM RATINGS _(TA=25°C)

PARAMETER

SYMBOL

VCBO

VCES

VCEO

VEBO

RATIOS

-20

-10

-6

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-2

-5

Pulsed (Note)

lc_P

Base Current

Collector Power Dissipation

Junction Temperature

Tstg

-2

°C

750

150

-55~150

Storage Temperature Range

°C

Note :Pulse Width= 10ms(Max.),Duty Cycle=30%(Max.)

ELECTRICAL CHARACTERISTICS _(TA=25°C)

SYMBOL

TEST CONDITIONS

I_C=10mA, I_B=0

MIN

TYP

MAX UNIT

PARAMETER

Collector-emitter breakdown voltage V_(BR)CEO

Emitter-collector breakdown voltage V_(BR)EBO

-10

I_E= -1mA, I_C=0

-6

Collector cut-off current

Emitter cut-off current

DC current Gain

I_CBO

I_EBO

hFE1

hFE2

VCE(sat)

VBE

VCE = -20V, I_E=0

VBE = -6V, I_C=0

-100

600

-0.5

-1.5

VCE= -1V, Ic=0.5A

VCE= -1V, Ic= -4A

Ic= -2A, IB= -50mA

VCE= -1V, Ic= -2A

VCE= -1V,Ic= -0.5A

VCE= -10V, IE=0, f=1MHz

140

120

-0.2

-0.83

140

Collector-emitter saturation voltage

Base-emitter voltage

Current gain bandwidth product

Output capacitance

MHz

Cob

CLASSIFICATIONS OF h_FE1

RANK

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R208-012,A

12 3

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