Datasheet > 2SA1300-Y

2SA1300-Y

更新时间： 2024-01-29 14:20:21

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	150K
描述
TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

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2SA1300-Y 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	TO-92	包装说明：	2-5F1B, SC-43, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.39	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	10 V	配置：	SINGLE
最小直流电流增益 (hFE)：	140	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	140 MHz	Base Number Matches：	1

2SA1300-Y 数据手册

2SA1300

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1300

Strobe Flash Applications

Medium Power Amplifier Applications

Unit: mm

•

High DC current gain and excellent h

linearity

: h

= 140~600 (V = −1 V, I = −0.5 A)

CE C

FE (1)

: h

= 60 (min), 120 (typ.) (V

= −1 V, I = −4 A)

FE (2)

•

Low saturation voltage: V

= −0.5 V (max)

CE (sat)

(I = −2 A, I = −50 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

−20

−10

−6

CBO

CES

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

−2

Collector current

Pulsed

−5

(Note 1)

JEDEC

JEITA

TO-92

Base current

−0.2

750

°C

SC-43

Collector power dissipation

Junction temperature

150

TOSHIBA

2-5F1B

Storage temperature range

stg

−55~150

°C

Weight: 0.21 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −20 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

−0.1

⎯

μA

CBO

Emitter cut-off current

= −6 V, I = 0

EBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

= −10 mA, I = 0

−10

−6

(BR) CEO

(BR) EBO

= −1 mA, I = 0

⎯

FE (1)

= −1 V, I = −0.5 A

140

⎯

600

DC current gain

(Note 2)

= −1 V, I = −4 A

⎯

120

−0.2

−0.83

140

⎯

−0.5

−1.5

⎯

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= −2 A, I = −50 mA

CE (sat)

= −1 V, I = −2 A

Transition frequency

= −1 V, I = −0.5 A

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

⎯

Note 2:

classification Y: 140~280, GR: 200~400, BL: 300~600

FE (1)

2007-11-01

12 3

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