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2SA1300_07 PDF预览

2SA1300_07

更新时间： 2024-11-24 04:25:47
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器闪光灯
页数 文件大小 规格书
3页 334K
描述
Strobe Flash Applications Medium Power Amplifier Applications

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2SA1300_07 数据手册

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2SA1300  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1300  
Strobe Flash Applications  
Medium Power Amplifier Applications  
Unit: mm  
•
High DC current gain and excellent h  
linearity  
FE  
: h  
: h  
= 140~600 (V  
= −1 V, I = −0.5 A)  
FE (1)  
FE (2)  
CE C  
= 60 (min), 120 (typ.) (V  
= −1 V, I = −4 A)  
C
CE  
•
Low saturation voltage: V  
= −0.5 V (max)  
CE (sat)  
(I = −2 A, I = −50 mA)  
C
B
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
−20  
−20  
−10  
−6  
CBO  
V
CES  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
V
DC  
I
−2  
C
Collector current  
A
Pulsed  
I
−5  
CP  
(Note 1)  
Base current  
I
−0.2  
750  
A
mW  
°C  
JEDEC  
JEITA  
TO-92  
B
Collector power dissipation  
Junction temperature  
P
C
SC-43  
T
150  
j
TOSHIBA  
2-5F1B  
Storage temperature range  
T
stg  
−55~150  
°C  
Weight: 0.21 g (typ.)  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −20 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −6 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= −10 mA, I = 0  
−10  
−6  
(BR) CEO  
(BR) EBO  
C
E
B
= −1 mA, I = 0  
⎯
V
C
h
FE (1)  
V
V
= −1 V, I = −0.5 A  
140  
⎯
600  
CE  
C
DC current gain  
(Note 2)  
h
= −1 V, I = −4 A  
60  
⎯
⎯
⎯
⎯
120  
−0.2  
−0.83  
140  
⎯
−0.5  
−1.5  
⎯
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −2 A, I = −50 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= −1 V, I = −2 A  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= −1 V, I = −0.5 A  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
50  
⎯
ob  
E
Note 2:  
h
classification Y: 140~280, GR: 200~400, BL: 300~600  
FE (1)  
1
2007-11-01  
123

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