Datasheet > 2SA1298

2SA1298

更新时间： 2024-11-20 07:29:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
1页	79K
描述
PNP Silicon Plastic Encapsulated Transistor

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中文翻译

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技术参数
数据手册

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2SA1298 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.44	Base Number Matches：	1

2SA1298 数据手册

2SA1298

-0.8A , -35V

PNP Silicon Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

 Low Frequency Power Amplifier Application

 Power Switching Applications

Top View

C B

CLASSIFICATION OF h_{FE (1)}

2SA1298-O

100~200

2SA1298-Y

160~320

Product-Rank

Range

Marking

Millimeter

Min. Max.

0.10 REF.

0.55 REF.

0.08 0.15

REF.

Min.

Max.

3.00

2.55

1.40

1.15

PACKAGE INFORMATION

2.80

2.25

1.20

0.90

Package

MPQ

LeaderSize

0.5 REF.

1.80

0.30

2.00

0.50

0.95 TYP.

SOT-23

7’ inch

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

-35

Collector to Emitter Voltage

Emitter to Base Voltage

-30

-5

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

-800

°C / W

°C

P_C

200

R_θJA

625

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Breakdown Voltage V_(BR)CBO

Collector to Emitter Breakdown

Symbol

Min.

-35

-30

-5

Typ.

Max.

Unit

Test Conditions

I_C= -1mA, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= -10mA, I_B=0

I_E= -1mA, I_C=0

V lt

Emitter to Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

-0.1

320

A

A

V_CB= -30V, I_E=0

V_EB= -5V, I_C=0

I_EBO

h_FE(1)

100

V_CE= -1V, I_C= -100mA

DC Current Gain

h_FE(2)

V_CE(sat)

V_BE

-0.5

V_CE= -1V, I_C= -800mA

I_C= -500mA, I_B= -20mA

V_CB= -1V, I_C= -10mA

Collector to Emitter

Saturation Voltage

-0.8

-0.5

Base to Emitter Saturation Voltage

Transition Frequency

f_T

120

MHz

V_CE= -5V, I_C= -10mA

Collector Output Capacitance

C_ob

V_CB= -10V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Jan-2011 Rev. A

Page 1 of 1

中文翻译

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与2SA1298相关器件

型号	品牌	获取价格	描述	数据表
2SA1298_07	TOSHIBA	获取价格	Low Frequency Power Amplifier Application Power Switching Applications
2SA1298O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| SC-59
2SA1298-O	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SA1298-O(TE85L)	TOSHIBA	获取价格	2SA1298-O(TE85L)
2SA1298OTE85L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1298OTE85R	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1298-O-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SA1298-O-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1298TE85L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1298-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,

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