Datasheet > 2SA1298

2SA1298

更新时间： 2024-11-20 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
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描述
TR ANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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2SA1298 数据手册

2SA1298

TRANSISTOR(PNP)

SOT–23

FEATURES

 Low Frequency Power Amplifier Application

 Power Swithing Applications

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-35

Unit

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current

-800

200

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

625

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

I_C=-1mA, I_E=0

-35

-30

-5

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-10mA, I_B=0

I_E=-1mA, I_C=0

V_CB=-30V, I_E=0

-0.1

320

μA

I_EBO

V_EB=-5V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-500mA, I_B=-20mA

V_CB=-1V,I_C=-10mA,

V_CE=-5V,I_C=-10mA

V_CB=-10V, I_E=0, f=1MHz

100

DC current gain

-0.5

-0.8

-0.5

Collector-emitter saturation voltage

Base-emitter voltage

f_T

120

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

RANK

RANGE

100–200

160–320

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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