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2SA1295O PDF预览

2SA1295O

更新时间: 2024-01-08 13:51:38
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
页数 文件大小 规格书
1页 27K
描述
Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-100, 3 PIN

2SA1295O 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2SA1295O 数据手册

  
LAP T 2 S A1 2 9 5  
Absolute maximum ratings (Ta=25°C)  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)  
Application : Audio and General  
(Ta=25°C)  
External Dimensions MT-200  
Electrical Characteristics  
Symbol  
ICBO  
Symbol  
Unit  
2SA1295  
2SA1295  
Conditions  
Unit  
µA  
µA  
V
±0.2  
6.0  
±0.3  
36.4  
VCBO  
VCEO  
VEBO  
IC  
–100max  
–100max  
–230min  
50min  
V
VCB=230V  
–230  
±0.2  
24.4  
2.1  
IEBO  
V
VEB=5V  
–230  
±0.1  
2-ø3.2  
9
V(BR)CEO  
hFE  
IC=25mA  
V
–5  
VCE=4V, IC=5A  
IC=5A, IB=0.5A  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
A
–17  
a
b
VCE(sat)  
fT  
IB  
2.0max  
35typ  
V
MHz  
pF  
A
–5  
200(Tc=25°C)  
150  
PC  
W
°C  
°C  
2
COB  
Tj  
500typ  
3
+0.2  
-0.1  
0.65  
Tstg  
to  
+0.2  
-0.1  
–55 +150  
to  
to  
hFE Rank O(50 100), Y(70 140)  
1.05  
+0.3  
-0.1  
3.0  
±0.1  
±0.1  
5.45  
5.45  
Typical Switching Characteristics (Common Emitter)  
B
C
E
Weight : Approx 18.4g  
a. Type No.  
b. Lot No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
IB2  
tstg  
tf  
ton  
(mA)  
(mA)  
(µs)  
(µs)  
(µs)  
–60  
12  
–5  
–10  
5
–500  
500  
1.50typ 0.30typ  
0.35typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
– 3  
–17  
–15  
–17  
–15  
–10  
–5  
–2  
–10  
–1  
IC=–10A  
–5  
–50mA  
IB=–20mA  
–5A  
0
0
0
0
–1  
–2  
–3  
–4  
0
–0.5  
–1.0  
–1.5  
–2.0  
0
–0.8  
–1.6  
–2.4  
–3.2  
Collector-Emitter Voltage VCE(V)  
Base Current IB(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–4V)  
(VCE=–4V)  
2
200  
200  
125˚C  
Typ  
25˚C  
1
100  
100  
50  
0.5  
50  
–30˚C  
10  
–0.02  
10  
–0.02  
0.1  
–0.1  
–0.5 –1  
Collector Current IC(A)  
–5 –10 –17  
1
10  
100  
Time t(ms)  
1000 2000  
–0.1  
–0.5 –1  
Collector Current IC(A)  
–5 –10 –17  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
60  
40  
200  
160  
120  
80  
–40  
–10  
–5  
–1  
–0.5  
20  
Without Heatsink  
Natural Cooling  
40  
–0.1  
Without Heatsink  
5
0
0
0.02  
–0.05  
0.1  
1
10  
–3  
–10  
–100  
–300  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
16  

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