LAP T 2 S A1 2 9 5
Absolute maximum ratings (Ta=25°C)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)
Application : Audio and General
(Ta=25°C)
External Dimensions MT-200
■Electrical Characteristics
■
Symbol
ICBO
Symbol
Unit
2SA1295
2SA1295
Conditions
Unit
µA
µA
V
±0.2
6.0
±0.3
36.4
VCBO
VCEO
VEBO
IC
–100max
–100max
–230min
50min
V
VCB=–230V
–230
±0.2
24.4
2.1
IEBO
V
VEB=–5V
–230
±0.1
2-ø3.2
9
V(BR)CEO
hFE
IC=–25mA
V
–5
VCE=–4V, IC=–5A
IC=–5A, IB=–0.5A
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
A
–17
a
b
VCE(sat)
fT
IB
–2.0max
35typ
V
MHz
pF
A
–5
200(Tc=25°C)
150
PC
W
°C
°C
2
COB
Tj
500typ
3
+0.2
-0.1
0.65
Tstg
to
+0.2
-0.1
–55 +150
to
to
hFE Rank O(50 100), Y(70 140)
1.05
+0.3
-0.1
3.0
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 18.4g
a. Type No.
b. Lot No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
IB2
tstg
tf
ton
(mA)
(mA)
(µs)
(µs)
(µs)
–60
12
–5
–10
5
–500
500
1.50typ 0.30typ
0.35typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
– 3
–17
–15
–17
–15
–10
–5
–2
–10
–1
IC=–10A
–5
–50mA
IB=–20mA
–5A
0
0
0
0
–1
–2
–3
–4
0
–0.5
–1.0
–1.5
–2.0
0
–0.8
–1.6
–2.4
–3.2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
2
200
200
125˚C
Typ
25˚C
1
100
100
50
0.5
50
–30˚C
10
–0.02
10
–0.02
0.1
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10 –17
1
10
100
Time t(ms)
1000 2000
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10 –17
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
60
40
200
160
120
80
–40
–10
–5
–1
–0.5
20
Without Heatsink
Natural Cooling
40
–0.1
Without Heatsink
5
0
0
0.02
–0.05
0.1
1
10
–3
–10
–100
–300
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
16