型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1297_07 | TOSHIBA |
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Power Amplifier Applications Power Switching Applications | |
2SA1297_10 | TOSHIBA |
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Power Amplifier Applications Power Switching Applications | |
2SA1297GR | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 2A I(C) | SPAK | |
2SA1297-GR | TOSHIBA |
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TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Pur | |
2SA1297Y | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 2A I(C) | SPAK | |
2SA1298 | HTSEMI |
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TR ANSISTOR(PNP) | |
2SA1298 | KEXIN |
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Silicon PNP Epitaxial | |
2SA1298 | TYSEMI |
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High DC current gain: hFE = 100 320 Low saturation voltage: VCE(sat) = -0.4V(max) | |
2SA1298 | TOSHIBA |
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TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS) | |
2SA1298 | SECOS |
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PNP Silicon Plastic Encapsulated Transistor |