5秒后页面跳转
2SA1294O PDF预览

2SA1294O

更新时间: 2024-01-30 03:10:42
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
1页 27K
描述
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

2SA1294O 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.7峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2SA1294O 数据手册

  
LAP T 2 S A1 2 9 4  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)  
Application : Audio and General Purpose  
(Ta=25°C)  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
External Dimensions MT-100(TO3P)  
Unit  
V
Symbol  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SA1294  
2SA1294  
Conditions  
Unit  
µA  
µA  
V
±0.2  
4.8  
±0.4  
15.6  
±0.1  
ICBO  
2.0  
–230  
VCB=230V  
–100max  
–100max  
–230min  
50min  
9.6  
V
IEBO  
–230  
VEB=5V  
IC=25mA  
V(BR)CEO  
hFE  
V
–5  
a
b
±0.1  
ø3.2  
A
VCE=4V, IC=5A  
C=5A, IB=0.5A  
–15  
IB  
VCE(sat)  
fT  
2.0max  
35typ  
A
I
V
MHz  
pF  
–4  
130(Tc=25°C)  
150  
PC  
VCE=12V, IE=2A  
W
°C  
°C  
2
Tj  
COB  
500typ  
VCB=10V, f=1MHz  
3
+0.2  
-0.1  
+0.2  
-0.1  
Tstg  
to  
–55 +150  
1.05  
0.65  
1.4  
to  
to  
hFE Rank O(50 100), Y(70 140)  
±0.1  
±0.1  
5.45  
5.45  
Typical Switching Characteristics (Common Emitter)  
B
C
E
Weight : Approx 6.0g  
a. Type No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
b. Lot No.  
–60  
12  
–5  
–10  
5
–500  
500  
0.35typ  
1.50typ 0.30typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
–15  
–15  
–10  
–5  
– 3  
–10  
–5  
0
–2  
–1  
–50mA  
IC=–10A  
IB=–20mA  
–5A  
0
0
0
–1  
–2  
–3  
–4  
0
–0.5  
–1.0  
–1.5  
–2.0  
0
–1  
–2  
–2.5  
Collector-Emitter Voltage VCE(V)  
Base Current IB(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–4V)  
(VCE=–4V)  
200  
200  
3
125˚C  
Typ  
100  
50  
25˚C  
100  
50  
1
–30˚C  
0.5  
10  
–0.02  
10  
–0.02  
0.1  
–0.1  
–0.5 –1  
–5 –10 –15  
1
10  
100  
Time t(ms)  
1000 2000  
–0.1  
–0.5 –1  
Collector Current IC(A)  
–5 –10 –15  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
130  
100  
–40  
60  
40  
–10  
–5  
–1  
50  
–0.5  
20  
Without Heatsink  
Natural Cooling  
–0.1  
Without Heatsink  
3.5  
0
0
0.02  
–0.05  
–3  
–10  
–100  
–300  
0.1  
1
10  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
15  

与2SA1294O相关器件

型号 品牌 描述 获取价格 数据表
2SA1294R SANKEN Power Bipolar Transistor,

获取价格

2SA1294Y SANKEN 暂无描述

获取价格

2SA1295 MOSPEC POWER TRANSISTORS(17A,230V,200W)

获取价格

2SA1295 SANKEN Silicon PNP Epitaxial Planar Transistor(Audio and General)

获取价格

2SA1295 JMNIC Silicon PNP Power Transistors

获取价格

2SA1295 SAVANTIC Silicon PNP Power Transistors

获取价格