2SA1296-GR

更新时间： 2024-01-26 13:47:24

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关放大器小信号双极晶体管电源开关功率放大器
页数	文件大小	规格书
3页	367K
描述
TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

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2SA1296-GR 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.77	Base Number Matches：	1

2SA1296-GR 数据手册

2SA1296

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1296

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= −0.5 V (max) @I = −2 A

CE (sat) C

Complementary to 2SC3266.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−20

Collector-emitter voltage

Emitter-base voltage

Collector current

−6

−2

Base current

−0.5

750

Collector power dissipation

Junction temperature

Storage temperature range

°C

150

JEDEC

JEITA

TO-92

stg

−55~150

SC-43

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −20 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

−0.1

⎯

μA

CBO

Emitter cut-off current

= −6 V, I = 0

EBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

= −10 mA, I = 0

−20

−6

(BR) CEO

(BR) EBO

= −0.1 mA, I = 0

⎯

FE (1)

(Note)

= −2 V, I = −0.1 A

120

⎯

400

DC current gain

= −2 V, I = −2 A

⎯

−0.5

−0.85

⎯

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= −2 A, I = −0.1 A

CE (sat)

= −2 V, I = −0.1 A

⎯

Transition frequency

= −2 V, I = −0.5 A

120

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

⎯

Note: h

Y: 120~240, GR: 200~400

FE (1)

2007-11-01

12 3

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