2SA1294Y

更新时间： 2024-02-15 03:43:23

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
1页	27K
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数据手册

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2SA1294Y 数据手册

LAP T 2 S A1 2 9 4

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)

Application : Audio and General Purpose

(Ta=25°C)

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

External Dimensions MT-100(TO3P)

Unit

Symbol

V^CBO

VCEO

VEBO

2SA1294

Conditions

Unit

µA

±0.2

4.8

±0.4

15.6

±0.1

I^CBO

2.0

–230

VCB=–230V

–100max

–230min

50min

9.6

IEBO

–230

V^EB=–5V

IC=–25mA

V(BR)CEO

hFE

–5

±0.1

ø3.2

V^CE=–4V, IC=–5A

C=–5A, IB=–0.5A

–15

VCE(sat)

–2.0max

35typ

MHz

–4

130(Tc=25°C)

150

V^CE=–12V, IE=2A

°C

COB

500typ

V^CB=–10V, f=1MHz

+0.2

-0.1

+0.2

-0.1

Tstg

–55 +150

1.05

0.65

1.4

hFE Rank O(50 100), Y(70 140)

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 6.0g

a. Type No.

V^CC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–60

–5

–10

–500

500

0.35typ

1.50typ 0.30typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–15

–10

–5

– 3

–10

–5

–2

–1

–50mA

IC=–10A

I^B=–20mA

–5A

–1

–2

–3

–4

–0.5

–1.0

–1.5

–2.0

–1

–2

–2.5

Collector-Emitter Voltage V^CE(V)

Base Current IB(A)

Base-Emittor Voltage V^BE(V)

–

^j-at Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=–4V)

200

125˚C

Typ

100

25˚C

100

–30˚C

0.5

–0.02

0.1

–0.1

–0.5 –1

–5 –10 –15

100

Time t(ms)

1000 2000

–0.1

–0.5 –1

Collector Current I^C(A)

–5 –10 –15

Collector Current I^C(A)

–

f^TIE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

130

100

–40

–10

–5

–1

–0.5

Without Heatsink

Natural Cooling

–0.1

Without Heatsink

3.5

0.02

–0.05

–3

–10

–100

–300

0.1

100

125

150

Collector-Emitter Voltage VCE(V)

Ambient Temperature Ta(˚C)

Emitter Current I^E(A)

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