2SA1203

更新时间： 2024-11-18 12:55:35

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
2页	101K
描述
Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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2SA1203 数据手册

Transys

Electronics

SOT-89 Plastic-Encapsulate Transistors

SOT-89

2SA1203 TRANSISTOR (PNP)

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM

: 0.5

W (Tamb=25℃)

Collector current

I_CM

: -1.5

Collector-base voltage

V_(BR)CBO: -30

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-1mA, I_E=0

MIN

-30

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Ic=-10mA, I_B=0

I_E=-1mA, I_C=0

µA

V_CB=-30V, I_E=0

-0.1

320

-2

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

V_CE(sat)

V_BE

DC current gain

V_CE=-2V, I_C=-500mA

100

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-1.5A, I_B=-30mA

_CE=-2V, I_C=-500mA

V_CE=-2V, I_C=-500mA

_CB=-10V, I_E=0, f=1MHz

-1

MHz

Transition frequency

f_T

120

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

HO1

160-320

HY1

Marking

中文翻译

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