是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 最大集电极电流 (IC): | 12 A |
配置: | Single | 最小直流电流增益 (hFE): | 40 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 100 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1206 | NEC |
获取价格 |
PNP SILICON TEANSISTOR | |
2SA1206 | NJSEMI |
获取价格 |
New Jersey Semi-Conductor Products, | |
2SA1206-A | RENESAS |
获取价格 |
2SA1206-A | |
2SA1207 | NJSEMI |
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New Jersey Semi-Conductor Products, | |
2SA1207 | SANYO |
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High-Voltage Switching, AF 60W Predriver Applications | |
2SA1207R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 70MA I(C) | TO-92 | |
2SA1207S | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 70MA I(C) | TO-92 | |
2SA1207S-AA | ONSEMI |
获取价格 |
2SA1207S-AA | |
2SA1207T | ETC |
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TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 70MA I(C) | TO-92 | |
2SA1207T-AA | ONSEMI |
获取价格 |
2SA1207T-AA |