Datasheet > 2SA1209R

2SA1209R

更新时间： 2024-11-21 20:16:51

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
4页	195K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SA1209R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

2SA1209R 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1209

DESCRIPTION

·With TO-126 package

·Complement to type 2SC2911

·High breakdown voltage

·Fast switching speed

APPLICATIONS

·High-voltage switching and

AF 100W predriver applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-180

-160

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-0.14

-0.20

1.0

I_CM

Collector current-Peak

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

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与2SA1209R相关器件

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2SA1209S	ISC	获取价格	Transistor
2SA1209S	ROCHESTER	获取价格	0.14mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, TO-126, 3 PIN
2SA1209-S	ROCHESTER	获取价格	0.14mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, TO-126, 3 PIN
2SA1209T	ISC	获取价格	Transistor
2SA1210	SANYO	获取价格	HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS
2SA1210	NJSEMI	获取价格	New Jersey Semi-Conductor Products,
2SA1210R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 140MA I(C) \| TO-126
2SA1210S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 140MA I(C) \| TO-126
2SA1210T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 140MA I(C) \| TO-126
2SA1213	TOSHIBA	获取价格	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)