生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.32 | 最大集电极电流 (IC): | 0.07 A |
集电极-发射极最大电压: | 160 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1208S | ETC | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 70MA I(C) | TO-92VAR |
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2SA1208S-AE | ONSEMI | TRANSISTOR,BJT,PNP,160V V(BR)CEO,70MA I(C),TO-92VAR |
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2SA1208T | ETC | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 70MA I(C) | TO-92VAR |
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2SA1209 | NJSEMI | New Jersey Semi-Conductor Products, |
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2SA1209 | SANYO | 160V/140mA High-Voltage Switching AF 100W Predriver Applications |
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2SA1209 | ISC | Silicon PNP Power Transistors |
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