Datasheet > 2SA1207R

2SA1207R

更新时间： 2024-02-08 04:56:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	47K
描述
TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 70MA I(C) \| TO-92

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2SA1207R 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.58
端子面层：	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	Base Number Matches：	1

2SA1207R 数据手册

Ordering number:ENN778F

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1207/2SC2909

High-Voltage Switching

AF 60W Predriver Applications

Features

Package Dimensions

unit:mm

· Adoption of FBET process.

· High breakdown voltage.

2003B

· Excellent linearity of h and small C .

· Fast switching speed.

[2SA1207/2SC2909]

5.0

4.0

0.45

0.5

0.44

0.45

1 : Emitter

2 : Collector

3 : Base

( ) : 2SA1207

1.3

SANYO : NP

1.3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–)180

(–)160

(–)5

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)70

(–)140

600

˚C

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)80V, I =0

=(–)4V, I =0

=(–)5V, I =(–)10mA

=(–)10V, I =(–)10mA

(–)0.1

400*

µA

CBO

Emitter Cutoff Current

DC Current Gain

EBO

100*

Gain-Bandwidth Product

Output Capacitance

150

(2.5)2.0

0.08

MHz

=(–)10V, f=1MHz

0.3

Collector-to-Emitter Saturation Voltage

=(–)30mA, I =(–)3mA

CE(sat)

(–0.14) (–0.4)

* : The 2SA1207/2SC2909 are classified by 10mA h as follows :

Continued on next page.

Rank

100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4

12 3 4

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