Datasheet > 2SA1209

2SA1209

更新时间： 2024-09-15 06:20:03

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
4页	99K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SA1209 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SA1209

DESCRIPTION

·With TO-126 package

·Complement to type 2SC2911

·High breakdown voltage

·Fast switching speed

APPLICATIONS

·High-voltage switching and

AF 100W predriver applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-180

-160

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-0.14

-0.20

1.0

I_CM

Collector current-Peak

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

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与2SA1209相关器件

型号	品牌	获取价格	描述	数据表
2SA1209_02	SANYO	获取价格	160V/140mA High-Voltage Switching and AF 100W Predriver Applications
2SA1209R	ISC	获取价格	Transistor
2SA1209S	ISC	获取价格	Transistor
2SA1209S	ROCHESTER	获取价格	0.14mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, TO-126, 3 PIN
2SA1209-S	ROCHESTER	获取价格	0.14mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, TO-126, 3 PIN
2SA1209T	ISC	获取价格	Transistor
2SA1210	SANYO	获取价格	HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS
2SA1210	NJSEMI	获取价格	New Jersey Semi-Conductor Products,
2SA1210R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 140MA I(C) \| TO-126
2SA1210S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 140MA I(C) \| TO-126