Datasheet > 2SA1213

2SA1213

更新时间： 2024-04-09 19:02:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	326K
描述
50V,2A,General Purpose PNP Bipolar Transistor

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2SA1213 数据手册

Product Specification

Silicon Planar Epitaxial Transistor

2SA1213

FEATURES



Low saturation voltage

High speed switching time

Small flat package

Complementary to 2SC2873

SOT-89

ORDERING INFORMATION

Type No.

2SA1213

Marking

NO/NY

Package Code

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

V_CBO

V_CEO

V_EBO

I_C

-50

-5

-2

I_B

-0.4

500

Collector Dissipation

P_C

1000(Note1)

Thermal resistance junction to ambient air

Junction-case thermal resistance

R_θjA

R_θjC

°C/W

℃

Junction and Storage Temperature

T_j,T_stg

-55 to +150

Note1: Mounted on ceramic substrate(250mm²*0.8t)

STM0227A: May 2019

www.gmesemi.com

12 3 4

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