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2SA1203_15 PDF预览

2SA1203_15

更新时间: 2024-11-19 01:26:19
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
页数 文件大小 规格书
2页 111K
描述
PNP TRANSISTOR

2SA1203_15 数据手册

 浏览型号2SA1203_15的Datasheet PDF文件第2页 
RoHS  
2SA1203  
SOT-89  
1. BASE  
2SA1203 TRANSISTOR (PNP)  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
1
PCM  
: 0.5  
W (Tamb=25)  
2
3
Collector current  
ICM  
: -1.5  
A
V
Collector-base voltage  
(BR)CBO : -30  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-1mA, IE=0  
MIN  
-30  
-30  
-5  
TYP  
MAX  
UNIT  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
Ic=-10mA, IB=0  
IE=-1mA, IC=0  
V
µA  
µA  
VCB=-30V, IE=0  
-0.1  
-0.1  
320  
-2  
IEBO  
VEB=-5V, IC=0  
hFE(1)  
VCE(sat)  
VBE  
DC current gain  
VCE=-2V, IC=-500mA  
100  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=-1.5A, IB=-30mA  
V
CE=-2V, IC=-500mA  
VCE=-2V, IC=-500mA  
CB=-10V, IE=0, f=1MHz  
-1  
MHz  
pF  
Transition frequency  
fT  
120  
Cob  
Collector output capacitance  
V
50  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
WEJ ELECTRONIC CO.,LTD  
Range  
100-200  
HO1  
160-320  
HY1  
Marking  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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