Datasheet > 2SA1204

2SA1204

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	448K
描述
SOT-89

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中文翻译

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数据手册

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2SA1204 数据手册

2SA1204

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SC2884

 High DC Current Gain

 Audio Frequency Amplifier Application

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-35

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-30

Emitter-Base Voltage

-5

Collector Current

-0.8

Collector Power Dissipation

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-100uA，I_E=0

I_C=-10mA，I_B=0

I =-100uA I =0

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-35

-30

-5

，

-0.1

320

uA V_CB=-35V, I_E=0

uA V_EB=-5V, I_C=0

Emitter cut-off current

I_EBO

h_FE1

100

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-700mA

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-0.7

-0.8

I_C=-500mA，I_B=-20mA

V_CE=-1V, I_C=-10mA

-0.5

Transition frequency

f_T

120

MHz V_CE=-5V,I_C=-10mA,

V_CB=-10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

100-200

160-320

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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中文翻译

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