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2SA1204-O PDF预览

2SA1204-O

更新时间: 2024-11-18 12:59:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体音频放大器晶体管
页数 文件大小 规格书
4页 132K
描述
TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

2SA1204-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-62包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.79外壳连接:COLLECTOR
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:1 W
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
VCEsat-Max:0.7 VBase Number Matches:1

2SA1204-O 数据手册

 浏览型号2SA1204-O的Datasheet PDF文件第2页浏览型号2SA1204-O的Datasheet PDF文件第3页浏览型号2SA1204-O的Datasheet PDF文件第4页 
2SA1204  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1204  
Audio Frequency Amplifier Applications  
Unit: mm  
High DC current gain: h  
= 100 to 320  
FE  
Suitable for output stage of 1 watts amplifier  
Small flat package  
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
Complementary to 2SC2884  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
800  
160  
500  
mA  
mA  
C
Base current  
I
B
P
P
C
C
PW-MINI  
JEDEC  
Collector power dissipation  
mW  
1000  
(Note 1)  
JEITA  
SC-62  
2-5K1A  
Junction temperature  
T
150  
°C  
°C  
j
TOSHIBA  
Storage temperature range  
T
stg  
55 to 150  
Weight: 0.05 g (typ.)  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-09  

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