Datasheet > 2SA1204-Y(TE12L,C)

2SA1204-Y(TE12L,C)

更新时间： 2024-11-21 15:25:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	132K
描述
X35 POWER TRANSISTOR; PW-MINI

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2SA1204-Y(TE12L,C) 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

2SA1204-Y(TE12L,C) 数据手册

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2SA1204

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1204

Audio Frequency Amplifier Applications

Unit: mm

•

High DC current gain: h

= 100 to 320

FE(1)

Suitable for output stage of 1 watts amplifier

Small flat package

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SC2884

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−35

−30

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−800

−160

500

Base current

PW-MINI

JEDEC

―

Collector power dissipation

1000

JEITA

SC-62

2-5K1A

(Note 1)

TOSHIBA

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Weight: 0.05 g (typ.)

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 mm t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-02-04

12 3 4

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