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2SA1203_09 PDF预览

2SA1203_09

更新时间: 2024-11-18 12:20:03
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
4页 140K
描述
Audio Frequency Amplifier Applications

2SA1203_09 数据手册

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2SA1203  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1203  
Audio Frequency Amplifier Applications  
Unit: mm  
Suitable for output stage of 3 watts amplifier  
Small flat package  
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
P
C
Complementary to 2SC2883  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
30  
30  
5  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
1.5  
0.3  
500  
C
Base current  
I
B
P
P
C
C
PW-MINI  
JEDEC  
Collector power dissipation  
mW  
1000  
(Note 1)  
JEITA  
SC-62  
2-5K1A  
Junction temperature  
T
150  
°C  
°C  
j
TOSHIBA  
Storage temperature range  
T
stg  
55 to 150  
Weight: 0.05 g (typ.)  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

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Suitable For Output Stage of 1 Watts Amplifier Small Flat Package