Datasheet > 2SA1203

2SA1203

更新时间： 2024-11-18 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	182K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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2SA1203 数据手册

2SA1203

SOT-89-3L

TRANSISTOR(PNP)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Complementary to 2SC2883

Small Flat Package

Audio Frequency Amplifier Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-30

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current

-1.5

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-35

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C= -1mA,I_E=0

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-30V,I_E=0

-100

320

-2

I_EBO

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-2V, I_C=-500mA

I_C=-1.5A,I_B=-30mA

V_CE=-2V, I_C=-500mA

V_CB=-10V,I_E=0, f=1MHz

VCE=-2V,IC= -500mA

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-1

Collector output capacitance

Transition frequency

C_ob

f_T

120

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

100–200

160–320

HY1

HO1

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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