5秒后页面跳转
捷配首页

Datasheet > 2SA1179-6-TB-E
2SA1179-6-TB-E PDF预览

2SA1179-6-TB-E

更新时间： 2024-09-13 21:12:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 64K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23

阅读下载

中文翻译

获取价格

2SA1179-6-TB-E 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
Factory Lead Time：1 week风险等级：5.57
最大集电极电流 (IC)：0.15 A配置：Single
最小直流电流增益 (hFE)：200JESD-609代码：e6
湿度敏感等级：1最高工作温度：150 °C
极性/信道类型：PNP最大功率耗散 (Abs)：0.2 W
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Bismuth (Sn/Bi)Base Number Matches：1

2SA1179-6-TB-E 数据手册

 浏览型号2SA1179-6-TB-E的Datasheet PDF文件第2页浏览型号2SA1179-6-TB-E的Datasheet PDF文件第3页浏览型号2SA1179-6-TB-E的Datasheet PDF文件第4页浏览型号2SA1179-6-TB-E的Datasheet PDF文件第5页 
Ordering number : EN3218B  
SANYO Sem iconductors  
DATA S HEET  
PNP / NPN Epitaxial Planar Silicon Transistors  
Low-Frequency General-Purpose  
Amplifier Applications  
2SA1179 / 2SC2812  
Features  
• Miniature package facilitates miniaturization in end products.  
• High breakdown voltage.  
Specifications ( ) : 2SA1179  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
(--)55  
(--)50  
(--)5  
V
V
I
C
(--)150  
(--)300  
(--)30  
200  
mA  
mA  
mA  
mW  
°C  
°C  
Collector Current (Pulse)  
Base Current  
I
CP  
I
B
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
C
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=(--)35V, I =0A  
Unit  
min  
max  
I
V
V
V
(--)0.1  
(--)0.1  
600*  
μA  
μA  
CBO  
CB  
EB  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(--)4V, I =0A  
C
EBO  
h
=(--)6V, I =(--)1mA  
135*  
FE  
C
2SC2812 : V =6V, I =1mA  
CE  
100  
(180)  
MHz  
MHz  
C
Gain-Bandwidth Product  
f
T
2SA1179 : V =--6V, I =--10mA  
CE  
C
Marking: 2SA1179: M / 2SC2812: L  
Continued on next page.  
*: The 2SA1179 / 2SC2812 are classified by 1mA h as follws:  
FE  
Rank  
5
6
7
h
FE  
135 to 270  
200 to 400  
300 to 600  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478 No.3218-1/5  
12345

中文翻译

下载PDF

与2SA1179-6-TB-E相关器件

型号 品牌 获取价格 描述 数据表
2SA1179-7 ETC

获取价格

 		TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
2SA1179N SANYO

获取价格

 		2SA1179N
2SA1179N_06 SANYO

获取价格

 		Low-Frequency General-Purpose Amp Applications
2SA1179N_12 SANYO

获取价格

 		Low-Frequency General-Purpose Amp Applications
2SA1179N6 ETC

获取价格

 		BJT
2SA1179N6-CPA-TB-E ONSEMI

获取价格

 		Bipolar Transistor
2SA1179N6-TB-E ONSEMI

获取价格

 		Bipolar Transistor
2SA1179-T RECTRON

获取价格

 		Transistor
2SA1180 ISC

获取价格

 		Silicon PNP Power Transistors
2SA1180 SAVANTIC

获取价格

 		Silicon PNP Power Transistors

与2SA1179-6-TB-E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证