Datasheet > 2SA1179N6-CPA-TB-E

2SA1179N6-CPA-TB-E

更新时间： 2024-10-31 01:21:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	418K
描述
Bipolar Transistor

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2SA1179N6-CPA-TB-E 数据手册

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Ordering number : EN7198B

2SA1179N/2SC2812N

Bipolar Transistor

http://onsemi.com

(–)

(

) (

)

50V,

150mA, Low V

sat , PNP NPN Single CPA

Features

•

Miniature package facilitates miniaturization in end products

High breakdown voltage

•

( ) : 2SA1179N

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

(--)55

Unit

CBO

(--)50

CEO

(--)5

EBO

(--)150

(--)300

(--)30

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

200

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: CPA

7053-001

• JEITA, JEDEC

: SC-59, TO-236, SOT-23,

TO-236AB

0.45

0.13

•

Minimum Packing Quantity : 3,000 pcs./reel

2SA1179N6-TB-E

2SA1179N6-CPA-TB-E

2SC2812N6-TB-E

2SC2812N6-CPA-TB-E

Packing Type: TB

0 to 0.1

0.95

1.9

2.93

1.3 MAX

Marking

1 : Base

2 : Emitter

3 : Collector

CPA

2SA1179N

2SC2812N

Semiconductor Components Industries, LLC, 2013

August, 2013

91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7

12 3 4 5 6 7

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