Datasheet > 2SA1182

2SA1182

更新时间： 2024-09-13 07:29:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	89K
描述
Silicon PNP Epitaxial

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中文翻译

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数据手册

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2SA1182 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SA1182

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

SOT-23 package

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-35

Unit

-30

-5

-500

-50

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Symbol

Testconditons

Min

Typ

Max

-0.1

240

Unit

ICBO

IEBO

VCB = -35 V, IE = 0

VEB = -5 V, IC = 0

VCE = -1 V, IC = -100 mA

VCE = -6 V, IC = -400 mA

DC current gain

hFE

Collector-emitter saturation voltage

Base-emitter voltage

VCE (sat) IC = -100 mA, IB = -10 mA

-0.1 -0.25

VBE

Cob

VCE = -1 V, IC = -100 mA

VCB = -6 V, IE = 0, f = 1 MHz

VCE = -6 V, IC = -20 mA

-0.8

-1.0

Collector output capacitance

Transition frequency

200

MHz

hFE Classification

Marking

Rank

hFE

70 140

120 240

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