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2SA1182_07 PDF预览

2SA1182_07

更新时间： 2024-11-30 04:25:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关运算放大器驱动
页数 文件大小 规格书
3页 319K
描述
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

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中文翻译

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2SA1182_07 数据手册

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2SA1182  
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)  
2SA1182  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
•
•
Excellent h  
linearity: h  
= 25 (min)  
FE (2)  
FE  
at V  
= −6 V, I = −400 mA  
C
CE  
Complementary to 2SC2859.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−35  
−30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−5  
V
I
−500  
−50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C
T
j
125  
T
stg  
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −35 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
V
V
⎯
⎯
70  
25  
⎯
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
240  
⎯
μA  
μA  
CBO  
CB  
EB  
CE  
CE  
E
I
= −5 V, I = 0  
C
EBO  
h
= −1 V, I = −100 mA  
⎯
FE (1)  
FE (2)  
C
DC current gain  
(Note)  
h
= −6 V, I = −400 mA  
⎯
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −100 mA, I = −10 mA  
−0.1  
−0.8  
200  
13  
−0.25  
−1.0  
⎯
V
V
CE (sat)  
C
B
V
V
V
V
= −1 V, I = −100 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= −6 V, I = −20 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= −6 V, I = 0, f = 1 MHz  
⎯
ob  
E
Note: h  
h
classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400  
classification O: 25 (min), Y: 40 (min), GR: 70 (min)  
(
) Marking Symbol  
FE (1)  
FE (2)  
Marking  
1
2007-11-01  
123

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