Datasheet > 2SA1182_15

2SA1182_15

更新时间： 2024-10-31 01:18:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	940K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1182_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1182

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Collector Current Capability IC=-0.5A

● Collector Emitter Voltage VCEO=-32V

● Complementary to 2SC2859.

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-40

Unit

VCBO

VCEO

VEBO

-32

-5

Collector Current - Continuous

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

-500

-50

℃

150

125

Storage Temperature range

Tstg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-40

-32

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -40 V , I

-0.1

EB= -5V , IC=0

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

CE(sat)

BE(sat)

=-100 mA, I

=-10mA

-0.1 -0.25

-1.2

C=-100 mA, I

CE=-1V, _C

-0.8

-1

=-100 mA

FE(1)

FE(2)

CE= -1V, I

CE=- 6V, I

CB= -6V, I

CE= -6V, I

= -100mA

400

DC current gain

= -400mA *1

Collector output capacitance

Transition frequency

= 0,f=1MHz

= -20mA

200

MHz

*1: h

classification O: 25 (min), Y: 40 (min), GR: 70 (min)

FE (2)

■ Classification of hfe(1)

Type

Range

Marking

2SA1182-O

70-140

2SA1182-Y

120-240

2SA1182-G

200-400

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