Datasheet > 2SA1162_03

2SA1162_03

更新时间： 2024-09-13 04:25:47

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
3页	104K
描述
Audio Frequency General Purpose Amplifier Applications

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中文翻译

获取价格

数据手册

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2SA1162_03 数据手册

2SA1162

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1162

Audio Frequency General Purpose Amplifier Applications

Unit: mm

High voltage and high current: V

= −50 V, I = −150 mA (max)

CEO

(I = −0.1 mA)/h

Excellent h

linearity: h

(I = −2 mA)

= 0.95 (typ.)

High h

= 70~400

FE: FE

Low noise: NF = 1dB (typ.), 10dB (max)

Complementary to 2SC2712

Small package

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

-50

CBO

CEO

EBO

-5

-150

-30

°C

Base current

JEDEC

JEITA

TO-236MOD

Collector power dissipation

Junction temperature

Storage temperature range

150

SC-59

125

TOSHIBA

2-3F1A

-55~125

stg

Weight: 0.012 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= -50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

-0.1

CBO

= -5 V, I = 0

EBO

DC current gain

= -6 V, I = -2 mA

400

(Note)

Collector-emitter saturation voltage

Transition frequency

= -100 mA, I = -10 mA

-0.1

-0.3

CE (sat)

= -10 V, I = -1 mA

MHz

Collector output capacitance

= -10 V, I = 0, f = 1 MHz

= -6 V, I = -0.1 mA, f = 1 kHz,

Noise figure

1.0

Rg = 10 kW,

Note: h classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol

Marking

2003-03-27

12 3

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