Datasheet > 2SA1162-G-HF

2SA1162-G-HF

更新时间： 2024-10-31 01:08:39

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1278K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1162-G-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SA1162-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High voltage and high current

● High h^FE: hFE = 70~400

+0.1

-0.1

+0.05

-0.01

0.95

0.1

● Low noise: NF = 1dB (typ.), 10dB (max)

● Complementary to 2SC2712-HF

+0.1

-0.1

1.9

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-50

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

-50

-5

-150

-30

℃

Collector Power Dissipation

Junction Temperature

150

125

Storage Temperature range

stg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -50 V , I

^EB= -5V , I

-100

-0.3

-1.2

400

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100 mA, I

=-10mA

C=-100 mA, I

hFE

^CE= -6V, I

C= -2mA

CE = −6 V, IC = −0.1 mA, f = 1 kHz,

Noise figure

Rg = 10 kΩ,

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -10V, I

= 0,f=1MHz

= -1mA

MHz

■ Classification of hfe

Type

Range

Marking

2SA1162-O-HF 2SA1162-Y-HF 2SA1162-G-HF

70-140 120-240 200-400

SO SY SG

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