2SA1162-O

更新时间： 2024-02-13 04:51:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	192K
描述
PNP Silicon Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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2SA1162-O 数据手册

M C C

2SA1162-O

2SA1162-Y

2SA1162-GR

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Capable of 0.15Watts of Power Dissipation.

Collector-current: 0.15A

Collector-base Voltage: -50V

Operating and storage junction temperature range: -55R to +150R

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

PNP Silicon

Plastic-Encapsulate

Transistor

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

SOT-23

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=-100uAdc, I_C=0)

Collector Cutoff Current

(V_CB=-50Vdc, I_E=0)

-50

-5

---

Vdc

---

Vdc

---

-0.1

uAdc

I_EBO

Emitter Cutoff Current

(V_EB=-5.0Vdc, I_C=0)

---

DIMENSIONS

INCHES

ON CHARACTERISTICS

DIM

MIN

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

h_FE

DC Current Gain

---

400

-0.3

---

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

(I_C=-2.0mAdc, V_CE=-6.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-100mAdc, I_B=-10mAdc)

V_CE(sat)

Vdc

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

---

MHz

(I_C=-1.0mAdc, V_CE=-10Vdcz)

Collector Output Capacitance

(V_CB=-10Vdc, I_E=0, f=1MHz)

Noise Figure

(V_CE=-6Vdc, I_C=0.1mA, f=1KHz, R_g=10K=)

.085

.37

Cob

Suggested Solder

Pad Layout

CLASSIFICATION OF H^{FE (1)}

.031

.800

Rank

Range

Marking

70-140

120-240

200-400

.035

.900

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与2SA1162-O相关器件

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2SA1162-O-TP-HF	MCC	暂无描述	获取价格
2SA1162S-Y,LF(D	TOSHIBA	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
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2SA1162TE85R	TOSHIBA	TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma	获取价格
2SA1162Y	MCC	150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	获取价格
2SA1162-Y	MCC	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI	获取价格
2SA1162-Y	TOSHIBA	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)	获取价格
2SA1162-Y	KEXIN	PNP Transistors	获取价格
2SA1162-Y(5LKENW,F	TOSHIBA	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
2SA1162-Y(T5LBSHAF	TOSHIBA	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
2SA1162-Y(T5LKEHIF	TOSHIBA	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
2SA1162-Y(T5LMAA,F	TOSHIBA	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	获取价格

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