是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.62 |
最大集电极电流 (IC): | 0.15 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PDSO-G3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1162-O-TP-HF | MCC | 暂无描述 |
获取价格 |
|
2SA1162S-Y,LF(D | TOSHIBA | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
获取价格 |
|
2SA1162S-Y-LF | TOSHIBA | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
获取价格 |
|
2SA1162TE85R | TOSHIBA | TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma |
获取价格 |
|
2SA1162Y | MCC | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 |
获取价格 |
|
2SA1162-Y | MCC | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI |
获取价格 |
|
2SA1162-Y | TOSHIBA | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
获取价格 |
|
2SA1162-Y | KEXIN | PNP Transistors |
获取价格 |
|
2SA1162-Y(5LKENW,F | TOSHIBA | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
获取价格 |
|
2SA1162-Y(T5LBSHAF | TOSHIBA | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
获取价格 |