Datasheet > 2SA1163_15

2SA1163_15

更新时间： 2024-11-15 01:12:55

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科信 - KEXIN		/
页数	文件大小	规格书
3页	1717K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1163_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1163

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High voltage: VCEO = −120 V

● High h^FE: hFE = 200~700

● Low noise: NF = 1dB (typ.), 10dB (max)

● Small package

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

● Complementary to 2SC2713

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-120

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

-100

-20

Collector Power Dissipation

Junction Temperature

150

125

℃

Storage Temperature range

stg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I =0

CB= -120 V , I =0

^EB= -5V , I =0

=-10 mA, I =-1mA

= -10 mA, I

^CE= -6V, I

Min

-120

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-100

-0.3

-1.2

700

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=- 1mA

hFE

= -2mA

200

CE = −6 V, IC = −0.1 mA, f = 1 kHz,

Noise figure

Rg = 10 kΩ,

Collector output capacitance

Transition frequency

CB= -10V, I

= 0,f=1MHz

^CE= -6V, I = -1mA

100

MHz

■ Classification of hfe

Type

Range

Marking

2SA1163-G

200-400

2SA1163-L

350-700

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