是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.38 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.15 A |
基于收集器的最大容量: | 7 pF | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | NOT SPECIFIED | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1162YTE85R | TOSHIBA |
获取价格 |
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma |
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2SA1162-YTE85R | TOSHIBA |
获取价格 |
暂无描述 |
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2SA1162-Y-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C |
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2SA1162-Y-TP-HF | MCC |
获取价格 |
Small Signal Bipolar Transistor, |
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2SA1163 | NJSEMI |
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New Jersey Semi-Conductor Products, |
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2SA1163 | TYSEMI |
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nullHigh voltage. Small package. High hFE. Low noise. |
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2SA1163 | KEXIN |
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Silicon PNP Epitaxial Type |
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2SA1163 | TOSHIBA |
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TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPUFIER APPLICATIONS) |
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2SA1163_07 | TOSHIBA |
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Audio Frequency General Purpose Amplifier Applications |
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2SA1163_15 | KEXIN |
获取价格 |
PNP Transistors |
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