2SA1162-YTE85R

更新时间： 2024-09-21 13:02:03

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
3页	178K
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数据手册

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2SA1162-YTE85R 数据手册

2SA1162

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1162

Audio Frequency General Purpose Amplifier Applications

Unit: mm

• High voltage and high current:

V = −50 V, I = −150 mA (max)

CEO C

• Excellent h

linearity: h

(I = −0.1 mA)/h

(I = −2 mA)

FE C

= 0.95 (typ.)

• High h

= 70~400

FE: FE

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SC2712

• Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−150

−30

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

JEDEC

JEITA

TO-236MOD

stg

−55~125

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

−0.1

μA

CBO

= −5 V, I = 0

EBO

(Note)

DC current gain

= −6 V, I = −2 mA

⎯

400

Collector-emitter saturation voltage

Transition frequency

= −100 mA, I = −10 mA

⎯

−0.1

⎯

−0.3

⎯

CE (sat)

= −10 V, I = −1 mA

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

= −6 V, I = −0.1 mA, f = 1 kHz,

Noise figure

⎯

1.0

Rg = 10 kΩ,

Note: h classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol

Marking

2007-11-01

12 3

中文翻译

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与2SA1162-YTE85R相关器件

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2SA1162-Y-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
2SA1162-Y-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1163	NJSEMI	获取价格	New Jersey Semi-Conductor Products,
2SA1163	TYSEMI	获取价格	nullHigh voltage. Small package. High hFE. Low noise.
2SA1163	KEXIN	获取价格	Silicon PNP Epitaxial Type
2SA1163	TOSHIBA	获取价格	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPUFIER APPLICATIONS)
2SA1163_07	TOSHIBA	获取价格	Audio Frequency General Purpose Amplifier Applications
2SA1163_15	KEXIN	获取价格	PNP Transistors
2SA1163BL	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 100MA I(C) \| TO-236AB
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