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2N7002K-T1-GE3 PDF预览

2N7002K-T1-GE3

更新时间: 2024-02-13 22:51:08
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
9页 219K
描述
N-Channel 60-V (D-S) MOSFET

2N7002K-T1-GE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:0.49Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/300555.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=300555PCB Footprint:https://componentsearchengine.com/footprint.php?partID=300555
3D View:https://componentsearchengine.com/viewer/3D.php?partID=300555Samacsys PartID:300555
Samacsys Image:https://componentsearchengine.com/Images/9/2N7002K-T1-GE3.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/2N7002K-T1-GE3.jpg
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236) --
Samacsys Released Date:2019-08-29 13:28:22Is Samacsys:N
其他特性:LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL功耗环境最大值:0.35 W
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002K-T1-GE3 数据手册

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Revision: 02-Oct-12  
Document Number: 91000  
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