Datasheet > 2N6798_10

2N6798_10

更新时间： 2024-09-25 07:29:11

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美高森美 - MICROSEMI		/
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3页	159K
描述
N-CHANNEL MOSFET

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数据手册

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2N6798_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

N-CHANNEL MOSFET

Qualified per MIL-PRF-19500/557

DEVICES

LEVELS

JANS

2N6798

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Symbol

V_DS

Value

200

Unit

Vdc

Gate – Source Voltage

V_GS

± 20

Continuous Drain Current

I_D1

I_D2

5.5

Adc

T_C= +25°C

Continuous Drain Current

3.5

T_C= +100°C

Max. Power Dissipation

P_tl

25 ⁽¹⁾

0.4 ⁽²⁾

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

T_op, T_stg

-55 to +150

°C

Note: (1) Derated Linearly by 0.2 W/°C for T_C> +25°C

(2) V_GS= 10Vdc, I_D= 3.5A

TO-205AF

(formerly TO-39)

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Drain-Source Breakdown Voltage

V_(BR)DSS

200

Vdc

V_GS= 0V, I_D= 1mAdc

Gate-Source Voltage (Threshold)

V_DS≥ V_GS, I_D= 0.25mA

V_DS≥ V_GS, I_D= 0.25mA, T_j= +125°C

V_GS(th)1

V_GS(th)2

V_GS(th)3

2.0

1.0

4.0

5.0

Vdc

V_DS≥ V_GS, I_D= 0.25mA, T_j= -55°C

Gate Current

V_GS= ±20V, V_DS= 0V

V_GS= ±20V, V_DS= 0V, T_j= +125°C

I_GSS1

I_GSS2

±100

±200

nAdc

Drain Current

V_GS= 0V, V_DS= 160V

V_GS= 0V, V_DS= 160V, T_j= +125°C

I_DSS1

I_DSS2

0.25

µAdc

mAdc

Static Drain-Source On-State Resistance

V_GS= 10V, I_D= 3.5A pulsed

V_GS= 10V, I_D= 5.5A pulsed

T_j= +125°C

r_DS(on)1

r_DS(on)2

0.4

0.42

V_GS= 10V, I_D= 3.5A pulsed

r_DS(on)3

V_SD

0.75

1.4

Diode Forward Voltage

V_GS= 0V, I_D= 5.5A pulsed

Vdc

T4-LDS-0167 Rev. 1 (101021)

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