Datasheet > 2N6800

2N6800

更新时间： 2024-11-22 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
7页	1172K
描述
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6800 with Hermetic Packaging

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2N6800 数据手册

PD-90432E

IRFF330

JANTX2N6800

JANTXV2N6800

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTORS

400V, N-CHANNEL

REF: MIL-PRF-19500/557

THRU-HOLE TO-205AF (TO-39)

Product Summary

Part Number

BVDSS

RDS(on)

I_D

IRFF330

400V

3.0A

1.0

TO-39

Description

Features

The HEXFET^®technology is the key to International

Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on state

resistance combined with high trans conductance.

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching and temperature stability of the

electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

3.0

2.0

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.20

± 20

191

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

3.0

2.5

4.0

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

For Footnotes, refer to the page 2.

2018-11-20

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

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2N6800 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6800	INFINEON	完全替代	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)
IRFF330	INFINEON	类似代替	400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF330 with Hermetic Packag
2N6800	MICROSEMI	功能相似	N-CHANNEL MOSFET

与2N6800相关器件

型号	品牌	获取价格	描述	数据表
2N6800_01	SEME-LAB	获取价格	N–CHANNEL ENHANCE-MENT POWER MOSFET
2N6800E	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EA	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EB	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EC	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800LCC4	SEME-LAB	获取价格	N–CHANNEL ENHANCEMENT MODE
2N6800SCC5205/019PBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi

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