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2N6428A PDF预览

2N6428A

更新时间: 2024-11-04 03:56:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管放大器
页数 文件大小 规格书
3页 92K
描述
NPN Epitaxial Silicon Transistor

2N6428A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:TO-92, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.8Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2N6428A 数据手册

 浏览型号2N6428A的Datasheet PDF文件第2页浏览型号2N6428A的Datasheet PDF文件第3页 
December 2006  
2N6428A  
tm  
NPN Epitaxial Silicon Transistor  
Features  
This device is designed for high gain, general purpose  
amplifier applications at collector currents from 1uA to 200 mA.  
TO92  
1
2 3  
1. Emitter 2. Base 3. Collector  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
50  
VCEO  
VEBO  
IC  
V
5
V
Collector Current - Continuous  
Total Device Dissipation  
200  
mA  
mW  
°C  
PD  
625  
TJ  
Junction Temperature  
150  
TSTG  
Storage Temperature Range  
- 55 ~ 150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Electrical Characteristics*  
T = 25°C unless otherwise noted  
C
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Conditions  
Min.  
60  
Max.  
Units  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
IC = 100µA, IE = 0  
V
V
IC = 1mA, IB = 0  
IE = 100µA, IC = 0  
VCB = 30V, IE = 0  
VBE = 5V, IC = 0  
50  
5
V
10  
10  
nA  
nA  
IEBO  
Emitter Cut-off Current  
hFE  
DC Current Gain  
VCE = 5V, IC = 0.01mA  
VCE = 5V, IC = 0.1mA  
VCE = 5V, IC = 1.0mA  
VCE = 5V, IC = 10mA  
250  
250  
250  
250  
650  
650  
VCE (sat)  
Collector-Emitter Saturation Voltage  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
0.2  
0.6  
V
V
VBE (on)  
fT  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE = 5V, IC = 1.0mA  
0.56  
100  
0.66  
700  
3
V
IC = 1mA, VCE = 5.0V, f = 100MHz  
VCB = 10V, IE = 0, f = 1MHz  
MHz  
pF  
Cob  
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
2N6428A Rev. A  
1
www.fairchildsemi.com  

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