2N6428A

更新时间： 2024-02-13 17:28:04

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号双极晶体管放大器
页数	文件大小	规格书
3页	92K
描述
NPN Epitaxial Silicon Transistor

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技术参数
数据手册

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2N6428A 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.74	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2N6428A 数据手册

December 2006

2N6428A

NPN Epitaxial Silicon Transistor

Features

•

This device is designed for high gain, general purpose

amplifier applications at collector currents from 1uA to 200 mA.

TO92

2 3

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings *

T = 25°C unless otherwise noted

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current - Continuous

Total Device Dissipation

200

°C

P_D

625

T_J

Junction Temperature

150

T_STG

Storage Temperature Range

- 55 ~ 150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics*

T = 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Parameter

Conditions

Min.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= 100µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 100µA, I_C= 0

V_CB= 30V, I_E= 0

V_BE= 5V, I_C= 0

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= 5V, I_C= 0.01mA

V_CE= 5V, I_C= 0.1mA

V_CE= 5V, I_C= 1.0mA

V_CE= 5V, I_C= 10mA

250

650

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 10mA, I_B= 0.5mA

I_C= 100mA, I_B= 5.0mA

0.2

0.6

V_BE(on)

f_T

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE= 5V, I_C= 1.0mA

0.56

100

0.66

700

I_C= 1mA, V_CE= 5.0V, f = 100MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

C_ob

* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%

2N6428A Rev. A

www.fairchildsemi.com

12 3

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