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2N6428AD26Z PDF预览

2N6428AD26Z

更新时间: 2024-11-25 14:26:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 23K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N6428AD26Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N6428AD26Z 数据手册

 浏览型号2N6428AD26Z的Datasheet PDF文件第2页浏览型号2N6428AD26Z的Datasheet PDF文件第3页 
2N6428/6428A  
Amplifier Transistor  
Collector-Emitter Voltage: V  
= 50V  
CEO  
Collector Dissipation: P (max)=625mW  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
6
V
I
200  
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
150  
J
T
-55 ~ 150  
°C  
STG  
Refer to 2N5088 for graphs  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
* Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
BV  
I =100µA, I =0  
60  
50  
V
V
CBO  
CEO  
C
E
I =1mA, I =0  
C
B
I
I
I
V
=30V, I =0  
10  
25  
10  
nA  
nA  
CBO  
CB  
CE  
BE  
E
V
V
=30V, I =0  
B
CEO  
EBO  
=5V, I =0  
C
h
* DC Current Gain  
V
V
V
V
=5V, I =10µA  
250  
250  
250  
250  
FE  
CE  
CE  
CE  
CE  
C
=5V, I =100µA  
650  
C
=5V, I =1mA  
C
=5V, I =10mA  
B
V
V
(sat) * Collector-Emitter Saturation Voltage I =10mA, I =0.5mA  
0.2  
0.6  
V
V
CE  
C
B
I =100mA, I =5mA  
C
B
(on)  
Base-Emitter On Voltage  
Output Capacitance  
I =1mA, V =5V  
0.56  
100  
0.66  
3
V
BE  
C
CE  
C
V
=10V, I =0, f=1MHz  
pF  
ob  
CB  
CE  
CE  
E
f
Current Gain Bandwidth Product  
V
=5V, I =1mA, f=100MHz  
700  
MHz  
T
C
NF/NV  
Noise Figure/Noise Voltage Level  
: 2N6428  
V
=5V, I =100µA  
C
(1) R =10K, B =1Hz  
3/18.1  
2/16.2  
dB/nV  
dB/nV  
S
W
: 2N6428A  
f=100Hz  
: 2N6428  
: 2N6428A  
(2) R =50K, B =15.7Hz  
f=10Hz-10KHz  
6/5.7  
4/4.6  
dB/nV  
dB/nV  
S
W
: 2N6428  
(3) R =500, B =1Hz  
3.5/4.3 dB/nV  
S
W
: 2N6428A  
f=10Hz  
3/4.1  
dB/nV  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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