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2N6433LEADFREE PDF预览

2N6433LEADFREE

更新时间: 2024-11-04 20:45:31
品牌 Logo 应用领域
CENTRAL 放大器晶体管
页数 文件大小 规格书
4页 900K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,

2N6433LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.37
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-18JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

2N6433LEADFREE 数据手册

 浏览型号2N6433LEADFREE的Datasheet PDF文件第2页浏览型号2N6433LEADFREE的Datasheet PDF文件第3页浏览型号2N6433LEADFREE的Datasheet PDF文件第4页 
2N6430 2N6431 NPN  
2N6432 2N6433 PNP  
www.centralsemi.com  
COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6430 series  
devices are complementary small signal silicon  
transistors manufactured by the epitaxial planar  
process, designed for high voltage amplifier applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
2N6430  
2N6432  
200  
2N6431  
2N6433  
300  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
V
CBO  
CEO  
EBO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage (NPN)  
Emitter-Base Voltage (PNP)  
Continuous Collector Current  
200  
300  
V
V
6.0  
5.0  
V
I
100  
1.8  
500  
mA  
W
C
Power Dissipation (T =25°C)  
C
Power Dissipation  
P
D
D
P
mW  
°C  
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
0.35  
J
stg  
Θ
°C/mW  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
97.2  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
2N6430  
2N6431  
2N6432  
2N6433  
SYMBOL  
TEST CONDITIONS  
MIN  
-
MAX  
100  
MIN  
-
MAX  
250  
UNITS  
nA  
I
I
I
I
V
V
V
V
=160V (2N6430, 2N6432)  
=200V (2N6431, 2N6433)  
=4.0V  
CBO  
CBO  
EBO  
EBO  
CB  
CB  
EB  
EB  
-
-
100  
-
250  
nA  
nA  
nA  
V
100  
-
-
=3.0V  
-
-
-
100  
BV  
BV  
BV  
BV  
BV  
I =100μA (2N6430, 2N6432)  
200  
300  
200  
300  
6.0  
-
-
200  
300  
200  
300  
5.0  
-
-
CBO  
CBO  
CEO  
CEO  
EBO  
C
I =100μA (2N6431, 2N6433)  
-
-
V
C
I =1.0mA (2N6430, 2N6432)  
-
-
-
-
V
C
I =1.0mA (2N6431, 2N6433)  
V
C
I =100μA  
-
-
V
E
V
V
I =20mA, I =2.0mA  
0.5  
0.9  
-
0.5  
0.9  
-
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =20mA, I =2.0mA  
-
-
V
C
B
h
h
h
V
=10V, I =1.0mA  
25  
40  
50  
25  
40  
30  
CE  
CE  
CE  
C
V
V
=10V, I =10mA  
-
-
FE  
C
=10V, I =30mA  
200  
150  
FE  
C
R1 (26-July 2013)  

2N6433LEADFREE 替代型号

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