Datasheet > 2N6439

2N6439

更新时间： 2024-11-04 07:29:07

品牌	Logo	应用领域
ASI		晶体晶体管射频放大器局域网
页数	文件大小	规格书
1页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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2N6439 数据手册

2N6439

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .500 6L FLG

The ASI 2N6439 is a Common

Emitter Device Designed For Large

signal output amplifier stages in the

225-400 MHz range.

FEATURES INCLUDE:

• Internal Input Matching Network

• 30:1 Load VSWR Capability

• All Gold Metalization

MAXIMUM RATINGS

60 V

V_CB

146 W @ T_C= 25 °C

P_DISS

1 = Collector

2 = Base

3 & 4 = Emitter

-65 °C to +200 °C

1.2 °C/W

T_STG

θ_JC

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CBO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 5.0 mA

4.0

BV_CES

BV_CBO

h_FE

_CE= 5.0 V

_CB= 28 V

I_C= 1.0 A

100

---

C_OB

G_Pe

η_C

f = 1 MHz

8.5

V_CE= 28 V

P_OUT= 60 W

f =225- 400 MHz

7.8

10.0

V_CE= 28 V

f = 400 MHz

30:1

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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