生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-205AD | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6465 | SEME-LAB | Bipolar NPN Device |
获取价格 |
|
2N6465 | SAVANTIC | Silicon NPN Power Transistors |
获取价格 |
|
2N6465 | ISC | Silicon NPN Power Transistors |
获取价格 |
|
2N6465 | NJSEMI | Silicon N-P-N and P-N-P Medium-Power Transistors |
获取价格 |
|
2N6465 | CENTRAL | Power Transistors |
获取价格 |
|
2N6465 | MICROSEMI | Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL |
获取价格 |